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| KSC2333 KSC2333 High Speed Switching Application * Low Collector Saturation Voltage * Specified of Reverse Biased SOA With Inductive Load 1 TO-220 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 1.Base Value 500 400 7 2 4 1 15 150 - 55 ~ 150 Units V V V A A A W C C *PW350s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 0.5A, IB =0.1A, L = 1mH IC = 0.5A, IB1 = -IB2 = 0.1A TC = 125C, L = 180H, clamped IC = 1A, IB1 = 0.2A, -IB2 =0.2A TC= 125C, L = 180H, clamped VCB = 400V, IE = 0 VCE = 400V, RBE =51, TC = 125C VCE = 400V, VBE(off) = -5V VCE = 400V, VBE(off) = -5V @ TC = 125C VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.5A, IB = 0.1A IC = 0.5A, IB = 0.1A VCC = 150V, IC = 0.5A IB1 = - IB2 = 0.1A RL = 300 20 10 Min. 400 450 400 10 1 10 1 10 80 1 1.2 1 2.5 1 V V s s s Max. Units V V V A mA A mA A * Pulse Test: PW350s, Duty Cycle2%Pulsed hFE Classification Classification hFE1 (c)2001 Fairchild Semiconductor Corporation R 20 ~ 40 O 30 ~ 60 Y 40 ~ 80 Rev. A1, June 2001 KSC2333 Typical Characteristics 1.0 1000 Ic[A], COLLECTOR CURRENT 0.8 IB = 100mA IB = 60mA IB = 90mA IB = 80mA IB = 70mA IB = 50mA VCE = 5V Pulsed hFE, DC CURRENT GAIN 5 100 0.6 IB = 40mA IB = 30mA IB = 20mA 0.4 IB = 10mA 0.2 10 0.0 0 1 2 3 4 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC /IB = 5 Pulsed IC = 5IB1 = -5IB2 Pulsed ton[s], TURN ON TIME tstg[s], STORAGE TIME tf[s], FALL TIME tstg 1 1 V BE(sat) tf ton 0.1 0.1 V CE(sat) 0.01 1 10 100 1000 0.01 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Turn On, Storage and Fall Time vs Collector Current 10000 1.0 0.9 IC[mA], COLLECTOR CURRENT Diss 1000 ipati on L 1m imit ed S 0 S 0 S IC(A), COLLECTOR CURRENT 10 PW =1 0.8 0.7 0.6 0.5 0.4 b S/ ite m Li d 10 m S VCEO(SUS) VCEX(SUS) 100 0.3 0.2 0.1 10 1 10 100 1000 0.0 0 50 100 150 200 250 300 350 400 450 500 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE (V), COLLECTOR-EMITTER VOLTAGE Figure 5. Forward Bias Safe Operating Area Figure 6. Reverse Bias Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC2333 Typical characteristics (Continued) 160 20.0 140 17.5 120 PC[W], POWER DISSIPATION 150 175 200 15.0 dT(%), Ic DERATING 100 12.5 80 10.0 S/b Limited 60 7.5 40 Dissipation Limited 5.0 20 2.5 0 0 25 50 o 0.0 75 100 125 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas Figure 8. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC2333 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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